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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT5401SPT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * Suitable for high packing density. (1) (6) SC-88/SOT-363 CONSTRUCTION * Two PNP transistors in one package. 1.2~1.4 0.65 0.65 2.0~2.2 MARKING * WS (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. -160 -150 -5.0 -200 200 +150 150 +150 UNIT V V V mA mW C C C 2004-11 RATING CHARACTERISTIC CURVES ( CHT5401SPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = -120 V VEB=3.0V IC = -1.0 mA; VCE = -5V IC = -10mA; VCE = -5V IC = -50 mA; VCE = -5V - - 50 60 50 - - 240 MIN. MAX. -50 -50 UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 420 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance IC = -10 mA; IB = -1.0 m A --50 mA; IB = -5.0 m A IC = IC =-10mA; IB=-1.0mA --50 mA; IB = -5.0 m A IC = - - - - -0.2 -0.5 -1.0 -1.0 6.0 200 300 8.0 V V V V pF VBEsat Cob hfe fT F IE = ie = 0; VCB = - 1 0 V; f = 1 MHz - VCE=-10V,IC=-1.0mA,f=1.0KHz 40 100 - transition frequency noise gure IC =- 10 mA; VCE = 1 0 V; f = 100 MHz IC = 200 A; VCE = 5 V; RS = 1 0 ; f =10Hz to 15.7KHz MHz dB |
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